feb.1999 mitsubishi transistor modules QM200HA-2H high power switching use insulated type outline drawing & circuit diagram dimensions in mm application ac motor controllers, ups, cvcf, dc motor controllers, nc equipment, welders QM200HA-2H ? i c collector current ........................ 200a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................... 75 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 108 3 93 f 6.5 9 bx b 9 16 e c 16 (13) (21) (29) 4 20 20 4 48 62 6.5 m6 m6 m4 36 41.5 25.5 b c e bx label
feb.1999 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m6 mounting screw m6 b(e) terminal screw m4 bx terminal screw m4 typical value ratings 1000 1000 1000 7 200 200 1560 10 2000 C40~+150 C40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 460 absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight unit v v v v a a w a a c c v nm kgcm nm kgcm nm kgcm nm kgcm g mitsubishi transistor modules QM200HA-2H high power switching use insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75/100 test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =200a, i b =4a Ci c =200a (diode forward voltage) i c =200a, v ce =2.8v/5v v cc =600v, i c =200a, i b1 =Ci b2 =4a transistor part diode part conductive grease applied typ. max. 4.0 4.0 800 2.5 3.5 1.8 3.0 15 3.0 0.08 0.35 0.04 parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin)
feb.1999 1 10 0 10 ? 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 3 10 2 10 1 10 0 10 2 10 1 10 0 10 ? 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 320 240 160 80 0 0 400 12345 t j =25? i b =1.0a i b =0.4a i b =4.0a i b =0.2a i b =2.0a 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.8 2.2 2.6 3.0 3.4 3.8 v ce =2.8v t j =25? 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v ce =2.8v t j =25? t j =125? v ce =5.0v 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t j =25? t j =125? v be(sat) v ce(sat) i b =4a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 v cc =600v t j =25? t j =125? t f t on t s i b1 =? b2 =4a 0 3 2 7 5 4 3 2 1 4 7 5 7 5 3 24 7 5 3 24 7 7 i c =300a i c =200a i c =100a t j =25? t j =125? i c =50a performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM200HA-2H high power switching use insulated type
feb.1999 3 10 2 10 1 10 0 10 0 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 3 10 2 10 1 10 3 10 2 10 1 10 0 10 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 50 s 100 s 200 s dc 1m s 7 5 4 3 2 2 10 7 5 4 3 ? 10 23457 0 10 23457 1 10 t j =25? t j =125? t f 7 1 10 7 v cc =600v i b1 =4a i c =200a 2 3 0 10 t s 400 100 0 0 200 1000 300 200 400 600 800 t j =125? i b2 =?0a i b2 = ?a 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 7 5 3 2 7 5 3 2 7 5 3 2 1.6 0.4 0.8 1.2 2.0 0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.10 0.08 0.06 0.02 0 444 23457 23 0.04 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM200HA-2H high power switching use insulated type z th (jCc) ( c/ w)
feb.1999 ? 10 2 10 1 10 0 10 0 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 10 0 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 400 800 1200 1600 2000 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 i rr t rr q rr v cc =600v i b1 =? b2 =4a t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.40 0.32 0.24 0.16 0.08 0 444 23457 23457 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules QM200HA-2H high power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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